| PART |
Description |
Maker |
| SB090P200-W-AG SB090P200-W-AG_AL SB090P200-W-AG/AL |
Schottky Barrier Diode Wafer 90 Mils, 200 Volt, 8 Amp
|
TRANSYS Electronics Limited
|
| CMSH3-100MFL |
SURFACE MOUNT SILICON SCHOTTKY RECTIFIERS 3.0 AMP, 100 THRU 200 VOLT
|
Central Semiconductor Corp
|
| SB090P200-W-AG |
Schottky Barrier Diode Wafer 90 Mils, 200 Volt, 8 Amp 肖特基二极管晶圆90米尔斯，200伏，8安培
|
Electronic Theatre Controls, Inc.
|
| MSK4227D MSK4227G MSK4227S MSK4227U |
200 VOLT 20 AMP MOSFET H-BRIDGE WITH GATE DRIVE GATE DRIVE
|
M.S. Kennedy Corporation
|
| SFF250-61 SFF250/61 |
30 AMP 200 Volts 0.085OHM N-Channel POWER MOSFET 30 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-61
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| LT1003 LT1003C LT1003CK LT1003M LT1003MK |
From old datasheet system
5 Volt, 5 Amp Voltage Regulator
5 Volt / 5 Amp Voltage Regulator
DFK-MSTB 2,5/12-G WW(1X1) 5 V FIXED POSITIVE REGULATOR, MBFM2
|
LINER[Linear Technology]
Linear Technology Corporation
Linear Technology, Corp.
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| LTC6403IUD-1TRPBF |
200MHz, Low Noise, Low Power Fully Differential Input/Output Amplier/Driver; Package: QFN; No of Pins: 16; Temperature Range: -40°C to 85°C OP-AMP, 1500 uV OFFSET-MAX, 200 MHz BAND WIDTH, PQCC16
|
Linear Technology, Corp.
|
| FCPS-2404 |
24 Volt, 4 Amp NAC Power Expander
|
List of Unclassifed Manufacturers
ETC
|
| STA516B10 |
65-volt, 7.5-amp, quad power half bridge
|
STMicroelectronics
|
| LT1996IMSPBF LT1996IMSTR |
Precision, 100µA Gain Selectable Amplifier; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 85°C OP-AMP, 200 uV OFFSET-MAX, 0.56 MHz BAND WIDTH, PDSO10
|
Linear Technology, Corp.
|
